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Part Number Overview
Manufacturer Part Number
SI3465DV-T1-GE3
Description
MOSFET P-CH 20V 3A 6TSOP
Detailed Description
P-Channel 20 V 3A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.14W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3465
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3465DV-T1-GE3
Documents & Media
Datasheets
1(SI3465DV)
HTML Datasheet
1(SI3465DV)
Quantity Price
-
Substitutes
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