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Part Number Overview
Manufacturer Part Number
SI4910DY-T1-GE3
Description
MOSFET 2N-CH 40V 7.6A 8SOIC
Detailed Description
Mosfet Array 40V 7.6A 3.1W Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
7.6A
Rds On (Max) @ Id, Vgs
27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
855pF @ 20V
Power - Max
3.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4910
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4910DY-T1-GE3DKR
SI4910DYT1GE3
SI4910DY-T1-GE3TR
SI4910DY-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4910DY-T1-GE3
Documents & Media
Datasheets
1(SI4910DY)
PCN Obsolescence/ EOL
1(PCN- SIL-0722014 10/Jun/2014)
HTML Datasheet
1(SI4910DY)
Quantity Price
-
Substitutes
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