China
Spain
Rusia
Italy
Germany2SC2235(T6KMAT,F,M
Part Number Overview
Manufacturer Part Number
2SC2235(T6KMAT,F,M
Description
TRANS NPN 120V 0.8A TO92MOD
Detailed Description
Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Power - Max
900 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SC2235
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2SC2235T6KMATFM
2SC2235(T6KMATFM
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC2235(T6KMAT,F,M
Documents & Media
Datasheets
1(2SC2235)
HTML Datasheet
1(2SC2235)
Quantity Price
-
Substitutes
-