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Part Number Overview
Manufacturer Part Number
HUFA75307T3ST
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Detailed Description
N-Channel 55 V 2.6A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,210
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA
Base Product Number
HUFA75307
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCHUFA75307T3ST
2156-HUFA75307T3ST
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUFA75307T3ST
Documents & Media
Datasheets
1(HUFA75307T3ST Datasheet)
Quantity Price
Quantity: 1210
Unit Price: $0.25
Packaging: Bulk
MinMultiplier: 1210
Packaging: Bulk
MinMultiplier: 1210
Substitutes
-