China
Spain
Rusia
Italy
GermanySG2013J-883B
Part Number Overview
Manufacturer Part Number
SG2013J-883B
Description
TRANS 7NPN DARL 50V 0.6A 16JDIP
Detailed Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
7 NPN Darlington
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
900 @ 500mA, 2V
Power - Max
-
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
16-CDIP
Base Product Number
SG2013
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1259-1108
1259-1108-MIL
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology SG2013J-883B
Documents & Media
Datasheets
1(SG2000)
Environmental Information
()
Quantity Price
-
Substitutes
-