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Part Number Overview
Manufacturer Part Number
HUF75829D3
Description
MOSFET N-CH 150V 18A IPAK
Detailed Description
N-Channel 150 V 18A (Tc) 110W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
567
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF75829D3-FS
FAIFSCHUF75829D3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75829D3
Documents & Media
Datasheets
1(HUF75829D3)
Quantity Price
Quantity: 567
Unit Price: $0.53
Packaging: Tube
MinMultiplier: 567
Packaging: Tube
MinMultiplier: 567
Substitutes
-