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Part Number Overview
Manufacturer Part Number
ESM2012DV
Description
TRANS NPN DARL 120V 120A ISOTOP
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 120 V 120 A 175 W Chassis Mount ISOTOP®
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 100A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1200 @ 100A, 5V
Power - Max
175 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Supplier Device Package
ISOTOP®
Base Product Number
ESM2012
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics ESM2012DV
Documents & Media
Datasheets
1(ESM2012DV)
HTML Datasheet
1(ESM2012DV)
Quantity Price
-
Substitutes
-