China
Spain
Rusia
Italy
GermanyFQI13N50CTU
Part Number Overview
Manufacturer Part Number
FQI13N50CTU
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 500 V 13A (Tc) 195W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
211
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2055 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
195W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCFQI13N50CTU
2156-FQI13N50CTU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI13N50CTU
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 211
Unit Price: $1.42
Packaging: Bulk
MinMultiplier: 211
Packaging: Bulk
MinMultiplier: 211
Substitutes
-