China
Spain
Rusia
Italy
GermanySIHA180N60E-GE3
Part Number Overview
Manufacturer Part Number
SIHA180N60E-GE3
Description
MOSFET N-CH 600V 19A TO220
Detailed Description
N-Channel 600 V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1085 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHA180
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHA180N60E-GE3DKR
SIHA180N60E-GE3TR
SIHA180N60E-GE3CT-ND
SIHA180N60E-GE3DKR-ND
SIHA180N60E-GE3TR-ND
SIHA180N60E-GE3DKRINACTIVE
SIHA180N60E-GE3CT
SIHA180N60E-GE3CTINACTIVE
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHA180N60E-GE3
Documents & Media
Datasheets
1(SIHA180N60E)
HTML Datasheet
1(SIHA180N60E)
Quantity Price
Quantity: 1000
Unit Price: $1.63138
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
Substitutes
-