China
Spain
Rusia
Italy
Germany2SJ646-TL-E
Part Number Overview
Manufacturer Part Number
2SJ646-TL-E
Description
P-CHANNEL SILICON MOSFET
Detailed Description
P-Channel 30 V 8A 1W (Ta), 15W (Tc) Through Hole TP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,401
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 15W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TP
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSFSC2SJ646-TL-E
2156-2SJ646-TL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2SJ646-TL-E
Documents & Media
-
Quantity Price
Quantity: 1401
Unit Price: $0.21
Packaging: Bulk
MinMultiplier: 1401
Packaging: Bulk
MinMultiplier: 1401
Substitutes
-