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Part Number Overview
Manufacturer Part Number
2SA1869-Y,Q(J
Description
TRANS PNP 50V 3A TO220NIS
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Power - Max
10 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SA1869
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2SA1869YQJ
2SA1869-YQ(J
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1869-Y,Q(J
Documents & Media
Datasheets
1(2SA1869)
HTML Datasheet
1(2SA1869)
Quantity Price
-
Substitutes
Part No. : 2SA2097(TE16L1,NQ)
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $0.78000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.78000
Substitute Type. : Similar