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MJD31C1G
Part Number Overview
Manufacturer Part Number
MJD31C1G
Description
TRANS NPN 100V 3A IPAK
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
1.56 W
Frequency - Transition
3MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Base Product Number
MJD31
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
MJD31C1G-ND
MJD31C1GOS
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJD31C1G
Documents & Media
Datasheets
1(MJD31 (NPN), MJD32 (PNP))
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 15/Dec/2022)
PCN Assembly/Origin
1(Qualification Multiple Devices 24/Sep/2013)
HTML Datasheet
1(MJD31 (NPN), MJD32 (PNP))
Quantity Price
-
Substitutes
Part No. : MJD31CT4G
Manufacturer. : onsemi
Quantity Available. : 0
Unit Price. : $0.60000
Substitute Type. : MFR Recommended
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