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PDTC123EEF,115
Part Number Overview
Manufacturer Part Number
PDTC123EEF,115
Description
TRANS PREBIAS NPN 50V 0.1A SC89
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount SC-89
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
4,000
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Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Supplier Device Package
SC-89
Base Product Number
PDTC123
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
934058178115
PDTC123EEF115
568-2151-2
PDTC123EEF T/R
568-2151-1
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTC123EEF,115
Documents & Media
Datasheets
1(PDTC123EM,315 Datasheet)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PDTC123EM,315 Datasheet)
Quantity Price
-
Substitutes
-
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