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Part Number Overview
Manufacturer Part Number
RFP4N06
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 60 V 4A (Tc) 25W (Tc) Through Hole TO-220
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
1,079
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-RFP4N06
HARHARRFP4N06
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP4N06
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1079
Unit Price: $0.33
Packaging: Bulk
MinMultiplier: 1079
Packaging: Bulk
MinMultiplier: 1079
Substitutes
-