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Part Number Overview
Manufacturer Part Number
IRF9512
Description
P-CHANNEL POWER MOSFET
Detailed Description
P-Channel 100 V 2.5A (Tc) 20W (Tc) Through Hole TO-220AB
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
544
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRF9512
HARHARIRF9512
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRF9512
Documents & Media
Datasheets
1(IRF9510)
Quantity Price
Quantity: 544
Unit Price: $0.55
Packaging: Bulk
MinMultiplier: 544
Packaging: Bulk
MinMultiplier: 544
Substitutes
-