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Part Number Overview
Manufacturer Part Number
BSS119N H7796
Description
SMALL SIGNAL N-CHANNEL MOSFET
Detailed Description
N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
6,918
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
20.9 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23-3-5
Package / Case
TO-236-3, SC-59, SOT-23-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-BSS119N H7796
INFINFBSS119N H7796
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS119N H7796
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-