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Part Number Overview
Manufacturer Part Number
SIS424DN-T1-GE3
Description
MOSFET N-CH 20V 35A PPAK 1212-8
Detailed Description
N-Channel 20 V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 19.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS424
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS424DN-T1-GE3
Documents & Media
Datasheets
1(SIS424DN)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIS424DN)
Quantity Price
-
Substitutes
-