China
Spain
Rusia
Italy
GermanyNP88N055KHE-E1-AY
Part Number Overview
Manufacturer Part Number
NP88N055KHE-E1-AY
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 55 V 88A 1.8W (Ta), 288W (Tc) Surface Mount TO-263-3
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
82
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
88A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 288W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNSNP88N055KHE-E1-AY
2156-NP88N055KHE-E1-AY
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP88N055KHE-E1-AY
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 82
Unit Price: $3.7
Packaging: Bulk
MinMultiplier: 82
Packaging: Bulk
MinMultiplier: 82
Substitutes
-