China
Spain
Rusia
Italy
GermanyAPT5010B2LLG
Part Number Overview
Manufacturer Part Number
APT5010B2LLG
Description
MOSFET N-CH 500V 46A T-MAX
Detailed Description
N-Channel 500 V 46A (Tc) 520W (Tc) Through Hole T-MAX™ [B2]
Manufacturer
Microchip Technology
Standard LeadTime
43 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Base Product Number
APT5010
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT5010B2LLG
Documents & Media
Datasheets
()
Environmental Information
()
HTML Datasheet
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Quantity Price
Quantity: 40
Unit Price: $17.02
Packaging: Tube
MinMultiplier: 40
Packaging: Tube
MinMultiplier: 40
Substitutes
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