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Part Number Overview
Manufacturer Part Number
SCTW40N120G2V
Description
SILICON CARBIDE POWER MOSFET 120
Detailed Description
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCTW40N120G2V Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1233 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTW40N120G2V
Documents & Media
Datasheets
1(SCTW40N120G2V)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
EDA Models
1(SCTW40N120G2V Models)
Quantity Price
Quantity: 510
Unit Price: $14.35357
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $15.83842
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $16.82833
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $20.79
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-