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Part Number Overview
Manufacturer Part Number
STH110N8F7-2
Description
MOSFET N-CH 80V 110A H2PAK-2
Detailed Description
N-Channel 80 V 110A (Tc) 170W (Tc) Surface Mount H2PAK-2
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
STripFET™ F7
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STH110
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
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Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STH110N8F7-2
Documents & Media
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Quantity Price
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Substitutes
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