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Part Number Overview
Manufacturer Part Number
VS-GT80DA120U
Description
IGBT MOD 1200V 139A 658W SOT227
Detailed Description
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227
Manufacturer
Vishay General Semiconductor - Diodes Division
Standard LeadTime
18 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay General Semiconductor - Diodes Division
Series
HEXFRED®
Package
Bulk
Product Status
Active
IGBT Type
Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
139 A
Power - Max
658 W
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 80A
Current - Collector Cutoff (Max)
100 µA
Input Capacitance (Cies) @ Vce
4.4 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Base Product Number
GT80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Vishay General Semiconductor - Diodes Division VS-GT80DA120U
Documents & Media
Datasheets
1(VS-GT80DA120U)
PCN Assembly/Origin
1(Wafer diameter change 07/Nov/2022)
HTML Datasheet
1(VS-GT80DA120U)
Quantity Price
Quantity: 100
Unit Price: $28.8759
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Quantity: 10
Unit Price: $33.015
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $37.15
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Substitutes
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