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Part Number Overview
Manufacturer Part Number
TK560A65Y,S4X
Description
MOSFET N-CH 650V 7A TO220SIS
Detailed Description
N-Channel 650 V 7A (Tc) 30W Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
52 Weeks
Edacad Model
TK560A65Y,S4X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
560mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK560A65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK560A65YS4X
TK560A65Y,S4X(S
TK560A65YS4X(S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK560A65Y,S4X
Documents & Media
Datasheets
1(TK560A65Y)
Featured Product
()
HTML Datasheet
1(TK560A65Y)
EDA Models
1(TK560A65Y,S4X Models)
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