China
Spain
Rusia
Italy
GermanyBC859CW135
Part Number Overview
Manufacturer Part Number
BC859CW135
Description
NOW NEXPERIA BC859CW - SMALL SIG
Detailed Description
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW Surface Mount SOT-323
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
200 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPBC859CW135
2156-BC859CW135
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC859CW135
Documents & Media
Datasheets
1(BC859W, BC860W)
HTML Datasheet
1(BC859W, BC860W)
Quantity Price
-
Substitutes
-