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Part Number Overview
Manufacturer Part Number
RFD16N02L
Description
16A, 20V, 0.022 OHM, N-CHANNEL L
Detailed Description
N-Channel 20 V 16A (Tc) 90W (Tc) Through Hole IPAK
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
606
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
22mOhm @ 16A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-RFD16N02L
HARHARRFD16N02L
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFD16N02L
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 606
Unit Price: $0.5
Packaging: Bulk
MinMultiplier: 606
Packaging: Bulk
MinMultiplier: 606
Substitutes
-