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Part Number Overview
Manufacturer Part Number
IRFSL4610PBF
Description
MOSFET N-CH 100V 73A TO262
Detailed Description
N-Channel 100 V 73A (Tc) 190W (Tc) Through Hole TO-262
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001578448
*IRFSL4610PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL4610PBF
Documents & Media
Datasheets
1(IRFB4610, IRFS(L)4610)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFB4610, IRFS(L)4610)
Quantity Price
-
Substitutes
Part No. : IPI086N10N3GXKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 470
Unit Price. : $1.75000
Substitute Type. : Similar
Quantity Available. : 470
Unit Price. : $1.75000
Substitute Type. : Similar