China
Spain
Rusia
Italy
GermanyFQPF3N60
Part Number Overview
Manufacturer Part Number
FQPF3N60
Description
MOSFET N-CH 600V 2A TO220F
Detailed Description
N-Channel 600 V 2A (Tc) 34W (Tc) Through Hole TO-220F-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
606
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQPF3N60-FS
FAIFSCFQPF3N60
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF3N60
Documents & Media
Datasheets
1(FQPF3N60)
Quantity Price
Quantity: 606
Unit Price: $0.5
Packaging: Tube
MinMultiplier: 606
Packaging: Tube
MinMultiplier: 606
Substitutes
-