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ULN2069B
Part Number Overview
Manufacturer Part Number
ULN2069B
Description
TRANS 4NPN DARL 80V 1.75A 16DIP
Detailed Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
ULN2069B Models
Standard Package
25
Supplier Stocks
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Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)
1.75A
Voltage - Collector Emitter Breakdown (Max)
80V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2.25mA, 1.5A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
1W
Frequency - Transition
-
Operating Temperature
-20°C ~ 85°C (TA)
Mounting Type
Through Hole
Package / Case
16-PowerDIP (0.300", 7.62mm)
Supplier Device Package
16-PowerDIP (20x7.10)
Base Product Number
ULN2069
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-2352-5-NDR
497-2352-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/STMicroelectronics ULN2069B
Documents & Media
Datasheets
1(ULN20xxB)
Other Related Documents
1(ULN2069B View All Specifications)
PCN Obsolescence/ EOL
1(EOL- 11/May/2023)
HTML Datasheet
1(ULN20xxB)
EDA Models
1(ULN2069B Models)
Quantity Price
-
Substitutes
Part No. : TBD62064APG,HZ
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 959
Unit Price. : $1.46000
Substitute Type. : Similar
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