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Part Number Overview
Manufacturer Part Number
RN1312(TE85L,F)
Description
TRANS PREBIAS NPN 50V 0.1A SC70
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount SC-70
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
52 Weeks
Edacad Model
RN1312(TE85L,F) Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70
Base Product Number
RN1312
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN1312(TE85LF)CT
RN1312(TE85LF)
RN1312TE85LF
RN1312(TE85LF)DKR
RN1312(TE85LF)-ND
RN1312(TE85LF)TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1312(TE85L,F)
Documents & Media
Datasheets
1(RN13(12,13))
EDA Models
1(RN1312(TE85L,F) Models)
Quantity Price
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Unit Price: $0.02889
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