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Part Number Overview
Manufacturer Part Number
2SD2337C-E
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 150 V 2 A 1.5 W Through Hole TO-220FM
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
187
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
150 V
Vce Saturation (Max) @ Ib, Ic
3V @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 10V
Power - Max
1.5 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220FM
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNS2SD2337C-E
2156-2SD2337C-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD2337C-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 187
Unit Price: $1.61
Packaging: Bulk
MinMultiplier: 187
Packaging: Bulk
MinMultiplier: 187
Substitutes
-