China
Spain
Rusia
Italy
GermanyBUZ100S
Part Number Overview
Manufacturer Part Number
BUZ100S
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 55 V 77A (Tc) 170W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
547
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2375 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFBUZ100S
2156-BUZ100S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ100S
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 547
Unit Price: $0.55
Packaging: Bulk
MinMultiplier: 547
Packaging: Bulk
MinMultiplier: 547
Substitutes
-