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Part Number Overview
Manufacturer Part Number
SCT3060ALGC11
Description
SICFET N-CH 650V 39A TO247N
Detailed Description
N-Channel 650 V 39A (Tc) 165W (Tc) Through Hole TO-247N
Manufacturer
Rohm Semiconductor
Standard LeadTime
35 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
852 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3060
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT3060ALGC11
Documents & Media
Datasheets
()
Other Related Documents
()
Product Training Modules
()
Video File
()
Environmental Information
()
Design Resources
1(TO-247N Inner Structure)
Featured Product
()
HTML Datasheet
()
Simulation Models
1(SCT3060AL Spice Model)
Reliability Documents
1(MOS-3GTHD Reliability Test)
Quantity Price
Quantity: 1020
Unit Price: $8.64011
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Unit Price: $13.64
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