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Part Number Overview
Manufacturer Part Number
SI3443DV
Description
MOSFET P-CH 20V 4.4A MICRO6
Detailed Description
P-Channel 20 V 4.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1079 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SI3443DV
Documents & Media
Datasheets
1(Si3443DV)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(Si3443DV)
Quantity Price
-
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