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Part Number Overview
Manufacturer Part Number
PUMD12/DG/B4X
Description
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 300mW Surface Mount 6-TSSOP
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230MHz, 180MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
6-TSSOP
Base Product Number
PUMD12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Nexperia USA Inc. PUMD12/DG/B4X
Documents & Media
Datasheets
1(PEMD12, PUMD12)
PCN Packaging
1(All Dev Label Chgs 2/Aug/2020)
HTML Datasheet
1(PEMD12, PUMD12)
Quantity Price
-
Substitutes
-