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Part Number Overview
Manufacturer Part Number
PSMN2R9-30MLC,115
Description
30 V, 2.95 MILLI OHM LOGIC LEVEL
Detailed Description
N-Channel 30 V 70A (Tc) 91W (Tc) Surface Mount LFPAK33
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
960
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2419 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
91W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK33
Package / Case
SOT-1210, 8-LFPAK33 (5-Lead)
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PSMN2R9-30MLC,115
NEXNXPPSMN2R9-30MLC,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN2R9-30MLC,115
Documents & Media
Datasheets
1(PSMN2R9-30MLC115 Datasheet)
HTML Datasheet
1(PSMN2R9-30MLC115 Datasheet)
Quantity Price
Quantity: 960
Unit Price: $0.31
Packaging: Bulk
MinMultiplier: 960
Packaging: Bulk
MinMultiplier: 960
Substitutes
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