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Part Number Overview
Manufacturer Part Number
TSM2N7000KCT A3G
Description
MOSFET N-CHANNEL 60V 300MA TO92
Detailed Description
N-Channel 60 V 300mA (Ta) 400mW (Ta) Through Hole TO-92
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Cut Tape (CT)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
TSM2N7000
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
TSM2N7000KCT A3GTB-ND
TSM2N7000KCT A3GCT-ND
TSM2N7000KCT A3GTB
TSM2N7000KCT A3GCT
TSM2N7000KCTA3GCT
TSM2N7000KCTA3GTB
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM2N7000KCT A3G
Documents & Media
Environmental Information
()
HTML Datasheet
1(TSM2N7000K)
Quantity Price
-
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