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Part Number Overview
Manufacturer Part Number
HUF76629D3S
Description
MOSFET N-CH 100V 20A TO252AA
Detailed Description
N-Channel 100 V 20A (Tc) 110W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
1,800
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1285 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF76629D3S-HC
HARHARHUF76629D3S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF76629D3S
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 458
Unit Price: $0.75
Packaging: Tube
MinMultiplier: 458
Packaging: Tube
MinMultiplier: 458
Substitutes
-