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NSBA114EDXV6T1

Part Number Overview

Manufacturer Part Number
NSBA114EDXV6T1
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased 50V 100mA 500mW Surface Mount SOT-563
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
4,438
Supplier Stocks
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Technical specifications

Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 PNP - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

ONSONSNSBA114EDXV6T1
2156-NSBA114EDXV6T1

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSBA114EDXV6T1

Documents & Media

Datasheets
1(NSBA143TDXV6T1)

Quantity Price

Quantity: 4438
Unit Price: $0.07
Packaging: Bulk
MinMultiplier: 4438

Substitutes

-

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