China
Spain
Rusia
Italy
GermanyBD436G
Part Number Overview
Manufacturer Part Number
BD436G
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP 32 V 4 A 3MHz 36 W Through Hole TO-225-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
888
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2A, 1V
Power - Max
36 W
Frequency - Transition
3MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-225-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSBD436G
2156-BD436G
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BD436G
Documents & Media
Datasheets
1(BD436TG)
Quantity Price
Quantity: 888
Unit Price: $0.34
Packaging: Bulk
MinMultiplier: 888
Packaging: Bulk
MinMultiplier: 888
Substitutes
-