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Part Number Overview
Manufacturer Part Number
SIR808DP-T1-GE3
Description
MOSFET N-CH 25V 20A PPAK SO-8
Detailed Description
N-Channel 25 V 20A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
815 pF @ 12.5 V
FET Feature
-
Power Dissipation (Max)
29.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR808
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR808DP-T1-GE3
Documents & Media
Datasheets
1(SIR808DP-T1-GE3)
PCN Obsolescence/ EOL
1(Commercial Mosfet OBS 29/Apr/2016)
HTML Datasheet
1(SIR808DP-T1-GE3)
Quantity Price
-
Substitutes
-