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Part Number Overview
Manufacturer Part Number
TK290A65Y,S4X
Description
MOSFET N-CH 650V 11.5A TO220SIS
Detailed Description
N-Channel 650 V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
TK290A65Y,S4X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK290A65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK290A65YS4X(S
TK290A65YS4X
TK290A65Y,S4X(S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK290A65Y,S4X
Documents & Media
Datasheets
1(TK290A65Y)
Featured Product
()
EDA Models
1(TK290A65Y,S4X Models)
Quantity Price
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