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Part Number Overview
Manufacturer Part Number
FDP16AN08A0
Description
MOSFET N-CH 75V 9A/58A TO220-3
Detailed Description
N-Channel 75 V 9A (Ta), 58A (Tc) 135W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
FDP16AN08A0 Models
Standard Package
330
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1857 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSONSFDP16AN08A0
2156-FDP16AN08A0
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP16AN08A0
Documents & Media
Datasheets
1(FDP16AN08A0 Datasheet)
EDA Models
1(FDP16AN08A0 Models)
Quantity Price
Quantity: 330
Unit Price: $0.91
Packaging: Bulk
MinMultiplier: 330
Packaging: Bulk
MinMultiplier: 330
Substitutes
-