China
Spain
Rusia
Italy
GermanyJANHCB2N3439
Part Number Overview
Manufacturer Part Number
JANHCB2N3439
Description
TRANS NPN 350V 1A TO39
Detailed Description
Bipolar (BJT) Transistor NPN 350 V 1 A 800 mW Through Hole TO-39 (TO-205AD)
Manufacturer
Microchip Technology
Standard LeadTime
52 Weeks
Edacad Model
Standard Package
100
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)
2µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA, 10V
Power - Max
800 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/368
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JANHCB2N3439
Documents & Media
Datasheets
1(Military Qualified Semiconductor Die/Chips)
Environmental Information
()
HTML Datasheet
1(Military Qualified Semiconductor Die/Chips)
Quantity Price
Quantity: 100
Unit Price: $14.6
Packaging: Tape & Reel (TR)
MinMultiplier: 100
Packaging: Tape & Reel (TR)
MinMultiplier: 100
Substitutes
-