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Part Number Overview
Manufacturer Part Number
SCT3120ALHRC11
Description
SICFET N-CH 650V 21A TO247N
Detailed Description
N-Channel 650 V 21A (Tc) 103W Through Hole TO-247N
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id
5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
103W
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT3120ALHRC11
Documents & Media
Datasheets
1(SCT3120ALHRC11)
Other Related Documents
1(SCT PPAP Statement)
Video File
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Featured Product
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Quantity Price
Quantity: 1020
Unit Price: $5.64217
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Substitutes
Part No. : SIHG22N60E-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 478
Unit Price. : $4.28000
Substitute Type. : Similar
Quantity Available. : 478
Unit Price. : $4.28000
Substitute Type. : Similar