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Part Number Overview
Manufacturer Part Number
FQT4N20TF
Description
MOSFET N-CH 200V 850MA SOT223-4
Detailed Description
N-Channel 200 V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
951
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQT4N20TF-FSTR-ND
2156-FQT4N20TF
FAIFSCFQT4N20TF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQT4N20TF
Documents & Media
Datasheets
1(FQT4N20TF)
Quantity Price
Quantity: 951
Unit Price: $0.32
Packaging: Bulk
MinMultiplier: 951
Packaging: Bulk
MinMultiplier: 951
Substitutes
-