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Part Number Overview
Manufacturer Part Number
FF200R12KT3EHOSA1
Description
IGBT MODULE 1200V 1050W
Detailed Description
IGBT Module 2 Independent 1200 V 1050 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
C
Package
Tray
Product Status
Not For New Designs
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
1050 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF200R12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FF200R12KT3_E-ND
FF200R12KT3_E
SP000314729
2156-FF200R12KT3EHOSA1
INFINFFF200R12KT3EHOSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF200R12KT3EHOSA1
Documents & Media
Datasheets
1(FF200R12KT3_E)
HTML Datasheet
1(FF200R12KT3_E)
Quantity Price
Quantity: 10
Unit Price: $132.932
Packaging: Tray
MinMultiplier: 10
Packaging: Tray
MinMultiplier: 10
Substitutes
-