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Part Number Overview
Manufacturer Part Number
RJK03E0DNS-00#J5
Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
N-Channel 30 V 30A (Ta) 20W (Tc) Surface Mount 8-HWSON (3.3x3.3)
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
319
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Rds On (Max) @ Id, Vgs
5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3050 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-RJK03E0DNS-00#J5
RENRNSRJK03E0DNS-00#J5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK03E0DNS-00#J5
Documents & Media
Datasheets
1(RJK03E0DNS-02#J5)
Quantity Price
Quantity: 319
Unit Price: $0.94
Packaging: Bulk
MinMultiplier: 319
Packaging: Bulk
MinMultiplier: 319
Substitutes
-