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2SC5773JR-TL-E
Part Number Overview
Manufacturer Part Number
2SC5773JR-TL-E
Description
SMALL SIGNAL BIPOLAR TRANSTR NPN
Detailed Description
RF Transistor NPN 6V 80mA 10.8GHz 700mW Surface Mount 3-MPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
955
Supplier Stocks
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Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
10.8GHz
Noise Figure (dB Typ @ f)
1.1dB @ 900MHz
Gain
11.9dB
Power - Max
700mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MPAK
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SC5773JR-TL-E
RENRNS2SC5773JR-TL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation 2SC5773JR-TL-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 955
Unit Price: $0.31
Packaging: Bulk
MinMultiplier: 955
Substitutes
-
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