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Part Number Overview
Manufacturer Part Number
CE2A3Q-T-AZ
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60 V 2 A 1 W Through Hole
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
560
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
1 W
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
-
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-CE2A3Q-T-AZ
RENRNSCE2A3Q-T-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation CE2A3Q-T-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 560
Unit Price: $0.54
Packaging: Bulk
MinMultiplier: 560
Packaging: Bulk
MinMultiplier: 560
Substitutes
-