China
Spain
Rusia
Italy
Germany2SD1133C-E
Part Number Overview
Manufacturer Part Number
2SD1133C-E
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 4 A 7MHz 40 W Through Hole TO-220AB
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
258
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 4V
Power - Max
40 W
Frequency - Transition
7MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNS2SD1133C-E
2156-2SD1133C-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD1133C-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 258
Unit Price: $1.16
Packaging: Bulk
MinMultiplier: 258
Packaging: Bulk
MinMultiplier: 258
Substitutes
-